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IXTH 22N50P IXTQ 22N50P
IXTV 22N50P IXTV 22N50PS
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-247 (IXTH) Outline
Min. Typ. Max.
g fs
C iss
V DS = 20 V; I D = 0.5 I D25 , pulse test
20
2630
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
310
pF
1
2
3
C rss
t d(on)
27
25
pF
ns
t r
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
27
ns
A 1
A 2
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
R thCS
R G = 10 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
(TO-247)
(TO-3P)
75
21
50
16
18
0.21
0.21
ns
ns
nC
nC
nC
0.35 K/W
K/W
K/W
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
2.2 2.54
2.2 2.6
b 1.0 1.4
1.65 2.13
b 1
b 2
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
0.205 0.225
.780 .800
.177
.140 .144
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
0.232 0.252
.170 .216
242 BSC
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 22 A, -di/dt = 100 A/ μ s, V GS = 0 V
400
16
55
1.5
A
A
V
ns
TO-3P (IXTQ) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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IXTV22N60P
功能描述:MOSFET 22.0 Amps 600 V 0.33 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV22N60PS
功能描述:MOSFET 22.0 Amps 600 V 0.33 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTV230N085T
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IXTV230N085TS
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IXTV250N075T
功能描述:MOSFET 250 Amps 75V 3.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXTV26N50PS
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